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David Ashton
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David Ashton   6/29/2013 7:59:38 PM
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He's trying to get back that great "Out of box experience" that it had when it was new....

David Ashton
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David Ashton   6/29/2013 7:57:07 PM
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Management were overheard saying that engineering are just a bunch of monkeys.  So he's "See no evil".

David Ashton
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David Ashton   6/29/2013 7:47:42 PM
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"He's been like this ever since management refused to get him a new monitor...."

kfield
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kfield   6/29/2013 7:46:40 PM
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Note - this is NOT an entry: David so pleased to see you back on EE Times! drop me an email some time!

David Ashton
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David Ashton   6/29/2013 7:36:46 PM
No, Bob!  The Boss said "Try and think OUTSIDE the box!"

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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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