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resistion
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3D NAND retention issue
resistion   7/7/2013 10:40:26 PM
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Comparing Figure 11a with 11b, the Vt shift looks much more obvious for the 3D NAND compared to 2D 2y FG.

resistion
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Re: Still many issues
resistion   7/2/2013 12:12:51 PM
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In their 2009 paper, they did 16 layers as 2X8, not all at once. More alternating layers makes a multilayer more optically reflective, basic physics.

Peter Clarke
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Re: Still many issues
Peter Clarke   7/2/2013 11:34:21 AM
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Doesnt Toshiba think they can do 16 layers?

Not sure if that is after or before you put a U-bend in the channel.

If before, then 8 layers can produce 16-bit NAND flash words on single vertically connected string.

 

 

 





resistion
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Still many issues
resistion   7/2/2013 11:07:16 AM
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Still many issues related to reliability, an extra dimension for disturbance, as well as the difficulty of etching straight and deep. Even lithography cannot escape difficulty. How can you align to the substrate through a just-deposited multilayer?



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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