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Peter Clarke
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Re: Blowing past Toshiba/SanDisk
Peter Clarke   7/16/2013 2:12:36 PM
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Lets see what Samsung and Hynix can do?

mcgrathdylan
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Re: Blowing past Toshiba/SanDisk
mcgrathdylan   7/16/2013 1:50:40 PM
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Glen Hawk emphasized the fact that this part is the smallest die size 128Gb NAND available much more than the 16nm process technology. But I agree that given the surprising move by SanDisk/Toshiba to stay at 19nm, Micron's migration down to 16 is impressive and differentiating.

Peter Clarke
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Blowing past Toshiba/SanDisk
Peter Clarke   7/16/2013 9:37:15 AM
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Given that Toshiba/SanDisk's 1Y generation stayed at 19-nm

http://www.eetimes.com/document.asp?doc_id=1280886

This looks likes a win for Intel/Micron planar HKMG memory cell structure.

But of course the proof is in the system-level pudding.

 

Does this put clear water between Micron and its competitors?

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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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