Don't know much about the NAND FLASH technology; But the first thought that occurs to me is the numbers of write/erase cycles that could be allowed for a NAND FLASH before it loses its capability for reliable operation. Is that number high enough as compared to DDR SDRAM? If FLASH is written/erased so frequently as like SDRAM how long it will last compared to a SDRAM?
Otherwise it will be great to have NV memory in place of the volatile memory...can get rid of batteries/super caps for implementing battery-backed memory.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Are the design challenges the same as with embedded systems, but with a little developer- and IT-skills added in? What do engineers need to know? Rick Merritt talks with two experts about the tools and best options for designing IoT devices in 2016. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.