Don't know much about the NAND FLASH technology; But the first thought that occurs to me is the numbers of write/erase cycles that could be allowed for a NAND FLASH before it loses its capability for reliable operation. Is that number high enough as compared to DDR SDRAM? If FLASH is written/erased so frequently as like SDRAM how long it will last compared to a SDRAM?
Otherwise it will be great to have NV memory in place of the volatile memory...can get rid of batteries/super caps for implementing battery-backed memory.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.