Embedded Systems Conference
Breaking News
Comments
Newest First | Oldest First | Threaded View
<<   <   Page 2 / 2
resistion
User Rank
Author
Re: max density
resistion   8/6/2013 7:59:14 PM
NO RATINGS
Assuming the 24 levels maximum, and a F=50 nm 6F^2 design rule, the maximum 3D density is equivalent to a conventional 12.5 nm floating gate. So the density lead for this case is temporary, until someone (if anyone) hits 10 nm floating gate. Increasing the number of levels or shrinking the 3D NAND design rule could increase costs when the number of steps starts multiplying, e.g., doubling.

_hm
User Rank
Author
Cost, Density and Power
_hm   8/6/2013 7:42:51 PM
NO RATINGS
That is a very good news for Samasung. It will be interesting to know cost, density and power advantage of this breakthorugh. Will this make future low cost laptop solidstate?

 

themassau
User Rank
Author
Re: Going vertical
themassau   8/6/2013 3:15:10 PM
NO RATINGS
in the link they explain 3d nand. its more like building a skyscraper of nand cells than finfets.

http://semiaccurate.com/2013/07/16/applied-materials-talks-about-3d-nand-flash-production/

goafrit
User Rank
Author
Re: Toshiba -SanDisk take a beating
goafrit   8/6/2013 2:55:21 PM
Have a lot of respect for Samsung. It is indeed one of the best tech firms in the world today. They move in and they begin to dominate. Excellent piece of execution.

rick merritt
User Rank
Author
Going vertical
rick merritt   8/6/2013 2:05:46 PM
NO RATINGS
I'd love to hear a simple explanation of what this vertical cell technology is all about.

For example, does it relate to FinFETs in some way?

resistion
User Rank
Author
Toshiba -SanDisk take a beating
resistion   8/6/2013 10:16:00 AM
NO RATINGS
A little painful to see Micron and Samsung beating down Toshiba and SanDisk at this time, after their earlier statements. Maybe they'll come back with 10 nm.

<<   <   Page 2 / 2


Radio
LATEST ARCHIVED BROADCAST
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
The LTC®6363 is a low power, low noise, fully differential ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...
The LTC®2348-18 is an 18-bit, low noise 8-channel ...
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...