Frankly I do not know what you are referring to. I would never promote a memory that dies at 100 Cand the data I sent to EEttimes goes to 300. Currently it is 400 C.
Now the self saturating is another story. The relationship between compliance and on currenyy can saturate at low compliance values, that is also In the literature. Of filaments
In one of your papers, there was a model of the insulator state. I am not sure if that model is updated yet. It suggested self-saturating current (which I presume not correct). More seriously, it also showed that the resistance of the insulator would be dramatically decreased at an elevated temperature above 100 C. Is there an update to this in an upcoming publication?
No problem - I really enjoy put this out there with frank questions and learned opinions.
The reasons are that may Sayers better know their stuff and knowledgeable skeptics can keep you on your toes . And finally we can perhaps challenge the pseudo science nonsense that some large companies seem so entitled to put out there disrespecting our intelligence.
I completely agree with you on PCM but I cannot agree with your radial switching even for filament makers. In the electro forming step the filaments are grown surrounding grain boundaries as shown recently in the literature. In this I agree and I modeled that long time ago and measured the activation energy. But the switching is not radial growth of filaments, only electro forming . In our case we have just too much data and analysis to the contrary. In PCM the local recrystalozatiom temperature leads to a heat conductivity of about 480 C/sec and that is about equal to molten salt. There is then radial heat dissipation and you are right. In FeRAM the surface defects nuclear daim growth down very fast, so thick or old Materials like TGS or even PVF2 depend on lateral growth that cannot go faster than the speed of sound.
I guess we can stay disagreeing on the mechanism until I can provide more data to match the physics. But, take a tip from the fact that (a) we can make NiO always conductive and if we have a 60 nm thick device with 100 micron squared, the resistance is 4 ohms. Now use that as buffer layer of 20 nms with a middle active switching region of 10 nms that can go to 150 mega ohms by switching, it makes radial charge transport a bit difficult. Stock to tunneling and you will stay on the right track.