Practically all desirable ELECTRONIC properties of graphene disappear when scaled deeply. Mobility drops below Si, techniques for surface passivation and contacting are non existent. Let's remember that the much ballyhooed properties are for um-wide suspended ribbons of exfoliated graphene. CVD deposited materials are a long long way off from even approaching the record setting performance of exfoliated materials.
Nevertheless the "wake me up when you are ready for TSMC" attitude is really short sighted. The problem with graphene is that people bend over backwards trying to make it look like Si (witness BisFET and other related proposals). The intriguing aspects of this work are that it demonstrates a creative use of graphene's unique properties.