Is this about CMOS or the material? I think we can still have CMOS design paradigm with another material beside Silicon. I hope we crack this code soon as it is long overdue. Something needs to help provide a new path for the continuation of Moore's law
Yes quite true, the industries are desperately looking for the CMOS alternative that can work beyond Gigahertz, since this metal alternatives have got bandwidth ranging upto Terahertz, if this time the technology gets commercially accepted it will really open a new era.
A tunneling-based device may be ideally designed or optimized for high nonlinearity. But it should be recognized that tunneling is not expected to be a high current output mechanism matching CMOS. A MOSFET that is off is already a tunneling barrier (reverse bias pn junction depletion zone) with nonlinearity.
It definitely IS a tunnel diode. But not a semiconductor but a metal electrode one. The difference is, that the semiconductor tunnel diode of the 60ies shows a region of negative differential resistance which allows some interesting applications as oscillator nd so on. The MIM diode can not show this kind of behavior due to the different band structure of the electrodes.
My current understanding of the MIIM diode is, that its main application is as a demodulator/detecter for very high freqiencies.