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resistion
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Re: NAND 's burden
resistion   11/20/2013 8:13:25 PM
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The controller is a large hidden cost for NAND flash. Anyone figured this out yet?

Peter Clarke
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Re: NAND 's burden
Peter Clarke   9/13/2013 5:58:51 AM
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Yes 

Clearly at the leading edge, MLC NAND flash requires extensive ECC and also a controller that will keep moving data on so that all the memory cells get similar wear....as they can only do a limited number of read/write cycles and ECC to correct for altered bits adds to the wear.

One implication of this "wear leveling" is that at the extreme the effective capacity of a leading-edge NAND flash memory reduces over time.

I am not sure whether the manufacturers provide additional capacity so that the memory "wears down" toward the advertized capacity ...or they produce what they produce and reckon it is down to the controller to "manage" the situation.

resistion
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NAND 's burden
resistion   9/12/2013 6:56:18 AM
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A lot of ECC, probably.

rick merritt
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Winbond
rick merritt   9/10/2013 9:21:09 AM
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Boy, there's a name I haven't heard in awhile!



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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