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Safety in numbers?
resistion   11/5/2013 10:16:07 PM
Maybe having so many CNTs involved gives robustness, but this also means less reliability with scaling, as fewer CNTs can be involved. Like they can't do a few nm thick.

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Re: Shaking nano cantilver NV
PhyandEE   10/6/2013 10:45:11 PM
TiN looks like a fantastic material. It could be the key in this structure.


Ron Neale
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Shaking nano cantilver NV
Ron Neale   9/18/2013 6:42:59 PM
There is a paper at SSDM 2013 that might have relevance to the performance of Nantera's CNT cantilever based memory. Titled "Release of Stuck Carbon Nanotube Arm by Resonant Vibration Toward Nano Relay Application, by T Tagota et al, as a joint effort by a team from Osaka Prefecture University and KRI Inc, Japan.

In the past Nantera reported that their memory had survived a trip in space, with all the vibration of blast off, it could be that test did not expose the memory to a critical resonant frequency. However, here again, as mentioned in my post below the redundacy afforded by the  use of multiple cantilevers in each memory cell means that the loss of a couple by shaking may not be too much of a problem. It is unlikely they will all have the same resonant frequency.


Peter Clarke
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Re: Visionary...
Peter Clarke   9/18/2013 6:44:04 AM
Maybe he thought it was a duff idea as a flexible CNT mat over an etched trench in silicon.

But when Nantero went in-via, he fell in love. 

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GroovyGeek   9/17/2013 7:57:48 PM
"Given my experience with non-volatile memory, I immediately saw that Nantero's memory could transform the industry"

This is one of the more boneheaded comments an exec can make when joining a 10 year old "startup".  What took you so long?  Nantero has been peddling the same idea for a decade. 

Ron Neale
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Re: vacuum packed?
Ron Neale   9/16/2013 7:27:34 PM
Good question Resition- If it is anything more than vaccum or a few atoms of gas then the drag on the nano-cantilevers would appear to have have the potential to stop the device from working. If the CNT fabric is spun on then it should be "relatively easy" to vacuum remove the solvent prior to metal electrode deposition.

It would be equally interesting to know  in each NRAM memory cell how many nano-cantilevers are involved in each switching event. It would appear there is a large amount of redundancy so a few failures could be tolerated. In the 3D fabric a stuck on or stuck off would require opening up a few new paths. The cantilevers involved number might have implications for scaling.


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vacuum packed?
resistion   9/16/2013 5:43:46 PM
The CNTs move in vacuum or what ambient?

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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