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franzChen
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Re: Good insight
franzChen   10/2/2013 5:56:07 AM
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It's a fair comment about the STT-MRAM. Plus the etching is always a concern from the process point of view, the difficulty of STT-MRAM as for SRAM/DRAM application is getting higher at more advaced nodes. And at the mainstream and old technology nodes, no demand to replace DRAM/SRAM with STT-MRAM either. So kind of subtle situation for STT-MRAM.

Peter Clarke
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Re: Good insight
Peter Clarke   10/2/2013 5:15:43 AM
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Memristor was the name ascribed to a theoretical two terminal variable resistence device by Leon Chua. The term was picked up and used by Hewlett-Packard who have worked on two-terminal memories.

However, in practice the landscape is very complex with numerous different materials systems being studied and the possibiity of multiple physical, chemical and quantum mechanical effects in play at the same time.

ReRAM is the most general term.

 

PhyandEE
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Re: Good insight
PhyandEE   10/1/2013 11:41:44 PM
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Is ReRAM the so-called memristor concept? There are so many papers on this in these a few years. 

rick merritt
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Re: Good insight
rick merritt   10/1/2013 10:07:34 PM
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Thx!

resistion
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Re: Good insight
resistion   10/1/2013 8:02:54 PM
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Although its write endurance is sufficient, it needs to demonstrate reliable read endurance as a SRAM or DRAM replacement. This will be hard to do for a fast read current, since read disturb is becoming more likely.

Another difficulty is the resistance-area product which is quite low at ~10 ohm-um2. In that case, the transistor must always be bigger than the MTJ, which is hard to sell. But for advanced nodes, even the interconnect resistance will be of the same order of magnitude.

So I think its burden for entry is quite high and getting higher.

rick merritt
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Re: Good insight
rick merritt   10/1/2013 3:49:09 PM
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@Resiston, re STT-MRAM: Any thoughts on when it could be ready and what its impact could be?

resistion
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Re: Good insight
resistion   9/30/2013 2:12:59 PM
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STT-MRAM is seen to fit the bill as DRAM replacement, if the cell transistor's resistance itself doesn't overshadow that of the STT-MRAM.

resistion
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3D ReRAM premature
resistion   9/30/2013 1:09:26 PM
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As noted in the abstracts the on/off ratios of the devices in the 3D-RRAMs are still on the order of 100-1000 at best. That is hardly worth bragging. Also, some 3D-RRAM current densities (e.g., IMEC) are too high.

rick merritt
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Good insight
rick merritt   9/30/2013 12:23:31 PM
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The dawn of the post DRAM era is not too far away and it could shake things up methinks...but how, who, when?

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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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