Breaking News
Comments
resistion
User Rank
Author
An's being generous to EUV
resistion   10/9/2013 8:02:08 AM
NO RATINGS
I watched/listened to a video interview in the past year given by Debra Vogler, in that interview An gave enough reasons to show why EUV is basically "out there" forever, saving my efforts. Dragging N10 and N7 nodes to a decade or longer, is "out there" forever.

resistion
User Rank
Author
Re: An's being generous to EUV
resistion   10/9/2013 10:55:44 PM
NO RATINGS
"Immersion systems may need 22 masks at 10nm, up from ten at 28nm, essentially using costly triple patterning in a handful of layers and double patterning at all others. EUV could cut that down to ten masks at 10nm, researchers estimate."

So, again confirming, essentially just one node (10 nm) for EUV single patterning. Same situation faced 157 nm, with far less drastic infrastructure changes required.

rick merritt
User Rank
Author
Re: An's being generous to EUV
rick merritt   10/10/2013 3:50:13 AM
NO RATINGS
Note: IMEC sees EUV helping reduce double and triple patterning at 7nm, too, but not eliminating it

resistion
User Rank
Author
LOCSOI
resistion   10/9/2013 5:47:26 PM
NO RATINGS
7 nm shows LOCSOI - is that local SOI?

rick merritt
User Rank
Author
Re: LOCSOI
rick merritt   10/10/2013 3:49:14 AM
NO RATINGS
@Resistion" Good question, but I don't have a good answer. I'l ask An to weigh in

AKH0
User Rank
Author
14nm FDSOI
AKH0   10/9/2013 7:00:57 PM
NO RATINGS
To be clear, IMEC never really worked on 14nm FDSOI. This was developed by IBM-ST-Leti alliance. So, it really doen't mean anything if its is shown on IMEC's roadmap or not.

resistion
User Rank
Author
memory part
resistion   10/9/2013 10:29:41 PM
NO RATINGS
For the memory portion, I was a bit surprised that there was not more focus on vertical NAND or future vertical 3D-NVM. That technology has just recently been announced, while FinFETs have been around much longer.

Also, why so much focus on STT-MRAM? They should know it is quite a fragile device. More fragile than a transistor at leading edge. The read is not 100% non-destructive, for the spec that is expected (quadrillion times).

rick merritt
User Rank
Author
Re: memory part
rick merritt   10/10/2013 3:51:26 AM
NO RATINGS
@Resistion: I did not go into a welath of material An presented about flash including the move to 3-D structures. But that info is implicit in the two memory foils if you look closely.

resistion
User Rank
Author
Re: memory part
resistion   10/10/2013 4:56:48 AM
NO RATINGS
Ok, I see 3D-SONOS, but STT still seems to be more all over the place. Of course worth looking at, but I think they're starting late.

resistion
User Rank
Author
Re: memory part
resistion   10/10/2013 10:11:01 AM
NO RATINGS
Samsung (IMEC member) alone seems to have its own drive for STT-MRAM research with its Global MRAM Innovation program: http://www.samsung.com/global/business/semiconductor/news-events/mram#!

 

rick merritt
User Rank
Author
DSA
rick merritt   10/10/2013 3:52:56 AM
NO RATINGS
I nelgected to note IMEC's CTO told me in the last year one of the programs that got the most ramping up at IMEC was on direct self assembly which they now show in their road map as having a significant role at 5nm helping beyond what EUV can/cannot do.

any1
User Rank
Author
Re: DSA
any1   10/10/2013 9:16:09 AM
NO RATINGS
Directed self assembly has made rapid progress in the last few years.  Since it looks like EUV will miss being implemented at the 10 nm node for leading edge companies like Intel, it's now looking like some sort of complimentary lithography scheme using DSA might be ready by the 7 or 5 nm nodes.

michigan0
User Rank
Author
IMEC's road map
michigan0   10/16/2013 5:59:21 PM
NO RATINGS

Why dose IMEC roadmap include FDSOI at 14nm today if it will 

drop it beyond 14nm? FDSOI was invented by IBM over a 

decade ago, but still not manufacturable at any technology 

node yet, including FDSOI at 35 and 28nm. 28nm Bulk Si is in 

mass production  for several years by major semiconductor

 companies.

 

Ge or InGaAs replacement processes are extremely difficult to

 be implemented in FinFET manufacturing. I do not think such

 replacement processes are necessary to enhance

 FinFET performance. SKim



resistion
User Rank
Author
Single patterning ain't coming back
resistion   10/17/2013 8:23:09 AM
NO RATINGS
1 saves
Even the EUV community is saying DP is necessary, DP cost has to come down.

john-F
User Rank
Author
EUV slip
john-F   10/20/2013 11:17:24 AM
NO RATINGS
how come no one is calling EUV program out on recent slip. ASML was suppose to ship like 5 80W source tools this year. Now that has been reduced to 1 and the new target for source power is 70W in 2014. EUV has missed 10nm or 9nm what what ever you want to call the node in 2017 after 14/16

resistion
User Rank
Author
Re: EUV slip
resistion   10/20/2013 12:18:20 PM
NO RATINGS
You're right, just read this: http://m.seekingalpha.com/article/1748582

 



Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Like Us on Facebook
Special Video Section
The LTC2380-24 is a versatile 24-bit SAR ADC that combines ...
In this short video we show an LED light demo to ...
02:46
Wireless Power enables applications where it is difficult ...
07:41
LEDs are being used in current luxury model automotive ...
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...
See the Virtex® UltraScale+™ FPGA with 32.75G backplane ...
Vincent Ching, applications engineer at Avago Technologies, ...