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Net_chief
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Re: Why shutdown TDM network?
Net_chief   10/22/2013 11:17:49 AM
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Related> Tellabs to be taken private for $891 million http://t.co/Eh7j3PXC4L

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Re: Why shutdown TDM network?
Net_chief   10/19/2013 10:33:11 PM
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Related> Will TDM get shutdown? When? Why? Why not? http://lnkd.in/b3hMzuR

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Re: Why shutdown TDM network?
Net_chief   10/19/2013 10:31:09 PM
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Related> An illustration in market disconnect: http://wp.me/pNLb5-cgL

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Re: Why shutdown TDM network?
Net_chief   10/18/2013 2:42:28 AM
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Related> Alcatel-Lucent's future is at risk: CEO http://wp.me/pNLb5-cg5

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Re: Why shutdown TDM network?
Net_chief   10/18/2013 2:40:41 AM
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Related> Telcos need to stay away from financial wizardry http://wp.me/pNLb5-ceL

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Re: Why shutdown TDM network?
Net_chief   10/18/2013 2:37:58 AM
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Related> Should The U.S. Get Rid Of Phone Lines? http://wp.me/pNLb5-ce0

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Why shutdown TDM network?
Net_chief   10/12/2013 9:49:52 AM
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The FCC aims to shut down the TDM network by 2017. AT&T previously announced it plans to turn off its TDM network by 2020.

Background informationat at: http://wp.me/pNLb5-cd2



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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