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3D NAND Challenges
toom_tabard   12/3/2013 2:06:34 PM
Great article Gary.

The cost aspects of Samsung/Toshiba's vertical channel 3D NAND approaches were published last month in the IEEE Transactions on Semiconductor Manufacturing (see the following link for free download:

A description of these cost challenges along with other technical issues can be found here at 3DIncites:

The main points are:

(1) If those vertical holes and slits are beyond a few tenths of a degree from the normal (in other words, if they are slightly slanted), the whole concept is no longer economically viable and can be undercut in cost by other approaches.

(2) The string currents rapidly decline as densities/capacities increase to the point where the question arises whether such approaches are indeed foundations for several generations to come or are simply one-offs.

Full disclosure - Both the IEEE paper and the 3DIncites piece were written by me.

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SS 3D: 24 layers
FraAmelia   12/4/2013 4:23:43 AM
Based on what SS discolsed the 128Gb V-NAND has 24 layers not 32. could you please comment?


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Re: 3D NAND Challenges
etienneazerty   12/4/2013 7:57:54 AM
Frankly, all the references you gave are based on a etch process that is flawn. Very high aspect ratio etch has no relation with conventional etching, notion like taper angle are inexistent.

With the same number DRAM capacitance scaling is impossible since many generations. Samsung is leader in DRAM by the way, so such etching technology is all but new.

I really think that we need a guy to catch a VNAND die, cut it and show to the community what is really inside so "consultants" can start from real numbers.

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Quadruple patterning cheap enough?
resistion   12/7/2013 9:15:19 AM
16 nm needs quadruple patterning or 2x double patterning but chips per area not doubled. So patterning cost not doubled? Otherwise stay at 20 nm. Parts Search

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