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Brian Butcher
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Re: Paper you are calling 22.3 if ref wrong!! NOT imec paper!
Brian Butcher   12/30/2013 2:41:22 PM
thanks for the correction Ron.

Happy Holidays.

Ron Neale
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Re: Paper you are calling 22.3 if ref wrong!! NOT imec paper!
Ron Neale   12/18/2013 6:17:22 AM
Thank you Brian and all of you for drawing my attention to the mix up in paper numbers.  You are correct there was a mix up with the paper numbers, my apologies to the authors  and organizations concerned. I will try and get the posted version corrected. I wanted readers to go back to the IEDM 2013 Proceedings so that all the many authors of each paper would get the equal exposure and credit they deserve so I decided to use just the paper numbers as references. My memory coverage was divided into three parts, PCM, Hafnia and 3D and matrix isolation/devices is next. Paper 22.3 is a phase change paper.

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Wrong example
resistion   12/18/2013 12:11:01 AM
Why use Hf/HfO2 as example of RRAM. There is an obvious homogenization risk.

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Wrong references
resistion   12/18/2013 12:08:54 AM
21.2 and 22.3 have nothing to do with RRAM.

Brian Butcher
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Paper you are calling 22.3 if ref wrong!! NOT imec paper!
Brian Butcher   12/17/2013 7:30:46 PM

22.3 is not correct for this paper, indeed you are discussing 22.2 and it is NOT an imec paper.

List of authors and affiliations are below

Connecting the Physical and Electrical Properties of Hafnia-based RRAM


G. Bersuker, (SEMATECH)

D. C. Gilmer, (SEMATECH)

L. Larcher, (Universita di Modena)

A. Padovani, (Universita di Modena)

L. Vandelli (Universita di Modena)


P. D. Kirsch  (SEMATECH)

Session 22 paper number 2

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nonvolatile   12/17/2013 6:52:09 PM
Paper 22.3 uses in a sense a combination of a Percolation Network of resistors with site differentiation between "empty" (vacancies) and filled (ions) sites (I am assuming site percolation and not bond percolation). The Monte Carlo technique statistically assigns oxidation numbers as the coordination sphere of each filled site is modified during the flow of vacancies, electrons, holes and intersticial ions. This approach is interesting and somewhat better in demonstrating the underlying physics but still there are two questions: (1) Valency changes, do not necessarily means that a metal/insulator transition can occur in HFOx (and for that matter also in Ta2O3-x). And, (2) It is possible that filaments can still be created in the bulk HfOx, but the "connect/disconnect" region is really provided at the Ti or TiN(partially oxidized) in which such a phase transition is more possible due to the Mott Transition of TiOx within the oxidation number change in the 2d(1) = d(0) + d(2) disproportionation. Furthermore, as you explain, the fixed location of the filaments in the model, may be non-realistic from bit to bit. The quantum aspect searched by these papers will continue to elude the models if statistics and percolation are the only theories really used. A fundamental explanation of the Metal/insulator transition in these materials, and most importantly, control of such a transition is afforded by the CeRAM concept which is on its way soon.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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