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vlsi_guy
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That would be ideal for power gating switches...
vlsi_guy   5/7/2014 11:21:52 AM
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Assuming idrive is good, leakage is comparable or better, and low source/drain resistance we could have these power gating (e.g., header switches) up near the top of the BEOL. Rather then now, where we have to go all the way down to FEOL then post switch route back up to upper layers just to distribute current back down to functional devices.

Sign me up :-)

 

R_Colin_Johnson
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Re: That would be ideal for power gating switches...
R_Colin_Johnson   5/7/2014 11:34:42 AM
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Of course, stacking memory is the most obvious application, but I'm sure that when designers put on their thinking cap they'll find many more useful applications of having active devices within the metalization layers--just like you did.

DrFPGA
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FPGA Configuration
DrFPGA   5/7/2014 11:41:01 AM
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The devices used to configure FPGAs can be slow- they just need to be on or off. Perhaps switches for signal routing right at the wire intersection would be a nice application for this technique...

jeremybirch
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Re: FPGA Configuration
jeremybirch   5/7/2014 12:42:21 PM
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The picture has a scale on it - the transistor is best part of a millimetre across with a gatelength of perhaps 50-100um - that is not going to be particularly fast.


What are the possibilities for scaling to somewhere nearer the underlying CMOS sizes?

R_Colin_Johnson
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Re: FPGA Configuration
R_Colin_Johnson   5/7/2014 2:08:21 PM
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This was just an early test, but they have plans to get down intro the sub-micron range using nanoimprint technology.

R_Colin_Johnson
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Re: That would be ideal for power gating switches...
R_Colin_Johnson   5/7/2014 3:57:59 PM
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Another great application, and I'm sure there are many more. Of course, SRC members will receive access to these research results via a non-exclusive royalty free license as part of their SRC membership, but others interested in using it can go through the university.

R_Colin_Johnson
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Rights and Permissions
R_Colin_Johnson   5/7/2014 4:00:29 PM
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SRC members will receive access to these research results via a non-exclusive royalty free license as part of their SRC membership, but others interested in using it can go through the university. (I know this is a dupe of what I appended to "Re: That would be ideal for power gating switches...", but thought it should be said separately too.)

GMF
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Apprentice
Re: That would be ideal for power gating switches...
GMF   5/7/2014 5:50:00 PM
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MAybe more cost atractive by depositing these materials through standard CMOS process. At least the transister size could be much smaller.

Astronut0
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That's a big transistor...
Astronut0   5/8/2014 4:55:55 PM
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Nice proof of concept, but that's one BIG, SLOW transistor!  It will be interesting to see whether smaller, faster transistors can be built by the same method.
Question: if they're built in layers, won't planarity become an issue?

R_Colin_Johnson
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Re: That's a big transistor...
R_Colin_Johnson   5/8/2014 7:22:10 PM
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Astronut0 said: Nice proof of concept, but that's one BIG, SLOW transistor! It will be interesting to see whether smaller, faster transistors can be built by the same method. Question: if they're built in layers, won't planarity become an issue? -- I didn't know the answers so I asked the authors. Here's what they said: RE: smaller transistors: Yes, smaller transistors can be made. Bandgap is large, so that helps with leakage, but @ high fields there is enhanced leakage through grain boundary generation. Mobility is what it is, however, without associated improvements in material. Mobility will still be lower than Si... the best mobility numbers reports for these materials are <100cm2/V-s, but, on the other hand, achievable carrier concentrations can be higher due to available states. RE: planarity: Planarization would be CMP if integrated within the other metal levels, or possibly SOG if integrated on top of the BEOL metallization.

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