Breaking News
Comments
vlsi_guy
User Rank
Author
That would be ideal for power gating switches...
vlsi_guy   5/7/2014 11:21:52 AM
NO RATINGS
Assuming idrive is good, leakage is comparable or better, and low source/drain resistance we could have these power gating (e.g., header switches) up near the top of the BEOL. Rather then now, where we have to go all the way down to FEOL then post switch route back up to upper layers just to distribute current back down to functional devices.

Sign me up :-)

 

R_Colin_Johnson
User Rank
Author
Re: That would be ideal for power gating switches...
R_Colin_Johnson   5/7/2014 11:34:42 AM
NO RATINGS
Of course, stacking memory is the most obvious application, but I'm sure that when designers put on their thinking cap they'll find many more useful applications of having active devices within the metalization layers--just like you did.

R_Colin_Johnson
User Rank
Author
Re: That would be ideal for power gating switches...
R_Colin_Johnson   5/7/2014 3:57:59 PM
NO RATINGS
Another great application, and I'm sure there are many more. Of course, SRC members will receive access to these research results via a non-exclusive royalty free license as part of their SRC membership, but others interested in using it can go through the university.

GMF
User Rank
Author
Re: That would be ideal for power gating switches...
GMF   5/7/2014 5:50:00 PM
NO RATINGS
MAybe more cost atractive by depositing these materials through standard CMOS process. At least the transister size could be much smaller.

DrFPGA
User Rank
Author
FPGA Configuration
DrFPGA   5/7/2014 11:41:01 AM
NO RATINGS
The devices used to configure FPGAs can be slow- they just need to be on or off. Perhaps switches for signal routing right at the wire intersection would be a nice application for this technique...

jeremybirch
User Rank
Author
Re: FPGA Configuration
jeremybirch   5/7/2014 12:42:21 PM
NO RATINGS
The picture has a scale on it - the transistor is best part of a millimetre across with a gatelength of perhaps 50-100um - that is not going to be particularly fast.


What are the possibilities for scaling to somewhere nearer the underlying CMOS sizes?

R_Colin_Johnson
User Rank
Author
Re: FPGA Configuration
R_Colin_Johnson   5/7/2014 2:08:21 PM
NO RATINGS
This was just an early test, but they have plans to get down intro the sub-micron range using nanoimprint technology.

R_Colin_Johnson
User Rank
Author
Rights and Permissions
R_Colin_Johnson   5/7/2014 4:00:29 PM
NO RATINGS
SRC members will receive access to these research results via a non-exclusive royalty free license as part of their SRC membership, but others interested in using it can go through the university. (I know this is a dupe of what I appended to "Re: That would be ideal for power gating switches...", but thought it should be said separately too.)

Astronut0
User Rank
Author
That's a big transistor...
Astronut0   5/8/2014 4:55:55 PM
NO RATINGS
Nice proof of concept, but that's one BIG, SLOW transistor!  It will be interesting to see whether smaller, faster transistors can be built by the same method.
Question: if they're built in layers, won't planarity become an issue?

R_Colin_Johnson
User Rank
Author
Re: That's a big transistor...
R_Colin_Johnson   5/8/2014 7:22:10 PM
NO RATINGS
Astronut0 said: Nice proof of concept, but that's one BIG, SLOW transistor! It will be interesting to see whether smaller, faster transistors can be built by the same method. Question: if they're built in layers, won't planarity become an issue? -- I didn't know the answers so I asked the authors. Here's what they said: RE: smaller transistors: Yes, smaller transistors can be made. Bandgap is large, so that helps with leakage, but @ high fields there is enhanced leakage through grain boundary generation. Mobility is what it is, however, without associated improvements in material. Mobility will still be lower than Si... the best mobility numbers reports for these materials are <100cm2/V-s, but, on the other hand, achievable carrier concentrations can be higher due to available states. RE: planarity: Planarization would be CMP if integrated within the other metal levels, or possibly SOG if integrated on top of the BEOL metallization.

selinz
User Rank
Author
Re: That's a big transistor...
selinz   5/11/2014 11:39:05 AM
NO RATINGS
So a 1mm square that requires high voltages and has low mobilities. Sounds like the application space is fairly specific.... "good enough for sensors" was mentioned. With so many sensors, that doesn't help. Do you have alink pointing to more device details?

R_Colin_Johnson
User Rank
Author
Re: That's a big transistor...
R_Colin_Johnson   5/13/2014 1:21:24 PM
NO RATINGS
So a 1mm square that requires high voltages and has low mobilities. Sounds like the application space is fairly specific.... "good enough for sensors" was mentioned. With so many sensors, that doesn't help. Do you have alink pointing to more device details?

Authors say the most likely sensors -- chem sensors, proximity sensors, various physical sensors such as pressure sensors just hapend to run low.  Additionally, some sensors for examle many chem sensors) actually use compatible materials that can be potentially printed in the same manner.


In other projects at UC Berkeley the group been doing a lot of work on internet-of-things type sensing applications, and the transistors herein are more than adequate.                                                                                                                                                                                                                                                                                                                                                                           



Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...
See the Virtex® UltraScale+™ FPGA with 32.75G backplane ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...