Really this is a stepping stone before entering into the 3D era. This step will bring the ever required memory size increase per package as an in-between development before 3D fabrication techniques are ready for manufacturing ICs.
It may not be just cost but also the read current performance. The V-NAND could have a better read current than the smaller silicon channel, but its vertical channel direction could easily get in the way.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.