It may not be just cost but also the read current performance. The V-NAND could have a better read current than the smaller silicon channel, but its vertical channel direction could easily get in the way.
Really this is a stepping stone before entering into the 3D era. This step will bring the ever required memory size increase per package as an in-between development before 3D fabrication techniques are ready for manufacturing ICs.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.