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bwmetz0
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Organic circuitry
bwmetz0   6/20/2014 4:02:12 PM
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This was our intern's attempt to create an organic P-N junction.

bwmetz0
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Strangest Mystery Box Item ever
bwmetz0   6/20/2014 3:54:34 PM
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I found this awesome Large Entropy Driver in the last mystery box I received.

bwmetz0
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Nature
bwmetz0   6/20/2014 3:43:59 PM
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Nature's 4-bit half-adder.

bwmetz0
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Supplier language barrier
bwmetz0   6/20/2014 3:42:12 PM
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I ordered an octa-bus test device...this is what our Chinese supplier sent me.

bwmetz0
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Market driven requirements
bwmetz0   6/20/2014 3:39:38 PM
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Marketing insisted that our customers would only buy an environmentally friendly FPU.

bwmetz0
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8-bit FPU?
bwmetz0   6/20/2014 3:38:08 PM
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...and this is our latest 8-bit FPU prototype.

bobjjones
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Ink
bobjjones   6/20/2014 3:05:17 PM
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Well, he has plenty of ink, but he just can't figure out how to print!

ChuckLippmeier
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Caption
ChuckLippmeier   6/20/2014 2:48:19 PM
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Hey, I've only got eight hands!

Stargzer
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Hands
Stargzer   6/20/2014 2:44:22 PM
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I tried telling him to keep his hands in his pockets while on the plant tour and not touch anything, but does anyone ever listen to me?

 

JDag
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Cartoon caption
JDag   6/20/2014 2:13:26 PM
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Whedn you said the new tech specialized in Octal, I didn't really know what you meant.  Now I do!

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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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