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Tc-99m   7/1/2014 4:39:45 AM
It's been a long, hard slog for MRAM. 

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Resistance scaling
resistion   7/1/2014 9:33:43 AM
As a resistance-based memory, MRAM must scale by increasing its level resistance. For a given resistance-area product, this can be achieved by directly shrinking the MTJ. This is similar to the PCM approach. Still I don't know why it hasn't be pursued more actively.

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Re: Resistance scaling
Tc-99m   7/2/2014 4:09:28 AM
I think getting well defined states in small, isolated magnetic elements is more difficult than once thought.

Also, as the elements gets smaller, they become more thermally unstable.  

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Re: Resistance scaling
resistion   7/5/2014 9:50:06 PM
Also the MR ratio is too small, even the transistor Ion range will cover it up.

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