It's very difficult for a non-volatile memory to attempt the speed typical of SRAM or DRAM. Basically some barrier is needed to preserve a state and this barrier would naturally limit switching speed unless using higher voltages. Furthermore, being a series resistance, the MRAM should dominate the resistance yet not load the circuit so much. On the other hand, keeping this resistance load low would prevent scaling.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.