The overall silicon carbide based semiconductor market is segmented into four major segments- technology, products, applications, and geography. All the segments are separately classified in the report. The Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 million by 2020; growing at a CAGR of 42.03% from 2014 to 2020.
Browse 86 market data tables and 49 figures spread through 250 slides and in-depth TOC on "Silicon carbide (SiC) in semiconductor market".
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Semiconductor devices based on silicon carbide such as high power semiconductor devices and high temperature semiconductor devicesare very useful when it comes to the devices being used in harsh conditions.The silicon based semiconductor device is slowly exiting the semiconductor market and is aggressively being replaced with more a powerful material called Silicon Carbide. Growth of Silicon Carbide based semiconductor device is mainly due to the fact that it has found its application in high voltage power electronics market;generally high voltage is above one kilo volt (> 1 KV). Thus, sectors such as industrial and power account a major share of revenue fromsilicon carbide based semiconductor devices.Automotive and transportation sectorsarealso expected to havehuge potential application for the silicon carbide market. These sectors include electric vehicle, railways, and airways.
Geographically, the silicon carbide based semiconductor market is segmented into North America (the U.S. and others), Europe, APAC (China, India, and others) and Rest of the World (Latin America, Middle East and others); geographic segment accounts Japan separately. The APAC market accounts for the highest market size and is followed by North America and Europe respectively.Japan, which is considered to the birth place of silicon carbide, accounted for approximately 13.83% of the total silicon carbide based semiconductor market in terms of value in 2013.
The players involved in the development of silicon carbide based semiconductor market includes CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (Sweden), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan).
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