When storing a bit on an atom, there are two concerns that come to mind immediately: (1) disturbance of the bit state, from thermal motion even, and (2) the reading/writing component is still much larger than the bit size, orders larger ratio than current memory arrays, i.e., the area use efficiency is poor.
Good points all! RRAM is a good candidate for next gen, as is 3D NAND but not so sure about Spin-Transfer-Torque, but since we mentioned the other varieties of spin we should have also mentioned spin polarization. Thanks for the additions.
I understand how managed flash can be kept as a candidate but there is no mention of 3D NAND or RRAM or even STT (which really should not be used for storage but maybe working memory), and too much mentioning of spintronics. 3D stacking also does not really define a new type of memory. PCM is counted as an "optical" memory? And do we really seriously consider atomic memory?
As we unveil EE Times’ 2015 Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. Panelists Dan Armbrust (investment firm Silicon Catalyst), Andrew Kau (venture capital firm Walden International), and Stan Boland (successful serial entrepreneur, former CEO of Neul, Icera) join in the live debate.