When storing a bit on an atom, there are two concerns that come to mind immediately: (1) disturbance of the bit state, from thermal motion even, and (2) the reading/writing component is still much larger than the bit size, orders larger ratio than current memory arrays, i.e., the area use efficiency is poor.
Good points all! RRAM is a good candidate for next gen, as is 3D NAND but not so sure about Spin-Transfer-Torque, but since we mentioned the other varieties of spin we should have also mentioned spin polarization. Thanks for the additions.
I understand how managed flash can be kept as a candidate but there is no mention of 3D NAND or RRAM or even STT (which really should not be used for storage but maybe working memory), and too much mentioning of spintronics. 3D stacking also does not really define a new type of memory. PCM is counted as an "optical" memory? And do we really seriously consider atomic memory?
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.