Would they proceed to 7+ without EUV. The node is a bunch of specs, EUV is just something they want to insert, but they really don't have as a 24x7 tool.
It looks like they are using 5nm information for their 7+, which seems premature. 7+ 1.2x density shouldn't have to change the number of immersion masks as they indicated. And for that 5nm design rule, EUV single patterning would not be sufficient anyway due to the line end gaps. On the other hand, the capacitance of cut SAQP grating lines (too many dummy) is not good for the Ps of PPA.