REGISTER | LOGIN
Breaking News
Comments
Newest First | Oldest First | Threaded View
resistion
User Rank
Author
Re: Illuminating
resistion   5/21/2017 6:59:00 PM
NO RATINGS
On your p. 2 figure, the two cases on the right for 36 and 38 nm pitch show different distributions of illumination points in the dark circle, and these are different still from 32 nm and (more extremely) 26 nm (the placement there also looks incorrect, for horizontal lines). These distributions came about through source-mask optimization (SMO). My understanding now is that EUV patterns shift when the wafer topography is higher or lower, and this is quite sensitive to pitch.

rick merritt
User Rank
Author
Re: Already too small
rick merritt   5/21/2017 6:02:25 PM
NO RATINGS
@resition: Yes, as i understand it a feature at 14A might be made up of the equivalent of 3-5 atoms which is crazy to think about.

rick merritt
User Rank
Author
Re: Illuminating
rick merritt   5/21/2017 6:01:00 PM
NO RATINGS
@resistion: I'm not sure I understand your comment. Can you clairify it?

 

traneus
User Rank
Author
Shift from analog to digital imaging
traneus   5/21/2017 10:48:38 AM
NO RATINGS
resistion wrote that the silicon lattice constant is 0.54  nm.  As feature sizes shrink, the analog idea of patterning onto continuous silicon breaks down. Instead, we are talking about a digital pixellated lattice of individual atoms, and the patterning process will be addressing individual atoms.

resistion
User Rank
Author
Illuminating
resistion   5/19/2017 8:48:21 PM
NO RATINGS
The EUV illumination is changing dramatically for small changes of pitches, that's a fundamental difficulty.

resistion
User Rank
Author
Already too small
resistion   5/19/2017 8:32:48 PM
NO RATINGS
The silicon lattice constant is 0.54 nm. This already makes 10% CD control impossible for 10-11 nm features, and so at ~20 nm CD it is already very difficult. IMEC projecting further into an era of nonsense fueled by EUV and nanowires.



Like Us on Facebook