SEOUL, South Korea — Samsung Electronics said it has developed a 2-gigabit OneNAND flash memory chip based on 60-nm process technology, claiming it is the world's fastest memory device.
The new memory chip doubles the capacity of existing OneNAND chips and features a write speed of 17-Mbytes/s, up from 9.3 Mbytes/s.
Samsung said potential applications range from multimedia phones to digital cameras, removable memory cards, PCs and digital TVs.
OneNAND chips can be interleaved to attain higher capacity while allowing each chip to independently interact with a system. The more interconnected chips, the more data that can be processed. For example, write capacity can be increased to as much as 136 Mbytes/s when eight of the 2-Gbit memory chips are combined, Samsung said.
They can also be used as buffer memory. For example, OneNAND memory is now being specified as the buffer memory inside a hybrid hard disk.
Samsung demonstrated a commercial Hybrid-HDD prototype at the WinHEC conference last month.
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