Reportedly built around 90-nm (0.09-micron) process technology, the 72-Mbit DDR3 SRAM from Samsung was manufactured, by using conventional 248-nm krypton-fluoride (KrF) lithography tools, according to the South Korean memory giant.

Targeted for high-end servers and workstations, the new DDR3 SRAM operates at speeds of 1.5-gigabits-per-second and requires only 1.2-Volts for low-power consumption. Based on a "breakthrough" cell technology, the chip measures 0.79-micron square, the company.

The company is already sampling a 32-Mbit DDR3 SRAM. Mass production of the 72-Mbit DDR3 SRAM is expected in the second half of 2003.

Samsung will present more details about the "breakthrough" SRAM cell technology at the International Solid-State Circuits Conference (ISSCC). The event will be held in San Francisco from Feb. 9-13.