SUNNYVALE, Calif. -- Silicon Storage Technology Inc., a developer of flash memory technology, said today (February 24, 2003) that the company has developed a 32-Mbit flash memory, based on the company's 0.18-micron self-aligned SuperFlash manufacturing process technology. SST claims that, because of the SuperFlash technology, the SST39VF320 has a chip erase time of 40-milliseconds, about 1000 times faster than 32-Mbit flash memories from competitors.
For in-system programming, individual sectors can be erased 50 to 100 times faster than conventional flash, thereby reducing power consumption, the company said.
"By allowing customers to update their code and data much faster, whether during the manufacturing stage or in-system, the SST39VF320 offers a performance leap over the conventional flash devices and can also be a cost-effective alternative for multi-bank flash devices," said Jason Feinsmith, business director, standard memory product group at SST, in a statement.
The SST39VF320 is the first device in SST's 0.18-micron self-aligned SuperFlash technology platform. SST is simultaneously bringing up three foundry manufacturers for its devices, TSMC, Samsung, and Vanguard, to support its 0.18-micron self-aligned SuperFlash technology.
"The combination of self-aligned memory cell and 0.18-micron technology brings unprecedented density scalability to our SuperFlash technology," said Bing Yeh, chief executive officer of SST, in a statement.
SST has been sampling the SST39VF320 since the fourth quarter of 2002 and volume production is planned for the third quarter of 2003 with pricing of $4.55 in 10,000 unit quantities.
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