BOISE, Idaho--Micron Technology Inc. today announced it has shipped its first samples of DDR-400 double-data rate SDRAMs to Silicon Integrated Systems Corp. in Taiwan for qualification on platforms using the SiS648 chip set.
The DDR-400 memories will boost throughput to 400 megabits per second--a 20% increase over the current DDR-333 speeds. Last week, Samsung Electronics Co. Ltd. announced it had shipped its first engineering samples of 400-DDR SDRAMs to SiS, Via Technologies Inc., and Nvidia Corp. (see March 15 story).
DDR memory suppliers are expecting the first DDR-400 memory systems to begin shipping in the second half of 2002.
Micron said it is conducting extensive system simulations on DDR-400 devices to determine what modifications may need to be implemented at both the system and module levels to ensure a smooth transition from DDR-333 to DDR-400.
"Because of the increasingly complex nature of emerging memory solutions, we are also working collaboratively with customers and partners to develop new devices and the system-level technologies that take advantage of them," said Terry Lee, executive director of advanced technology and strategic marketing for Micron's Computing and Consumer Group in Boise.
Like Samsung last week, Micron did not release information about pricing on DDR-400 synchronous DRAMs.
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