Nikon said it is strengthening the EPL infrastructure, including joint development efforts with mask makers, photoresist manufacturers and chip makers worldwide. Among the supporters are Texas Instruments Inc. and Agere Systems, the semiconductor spinoff from Lucent Technologies Inc.(see today's story).

The move to accelerate development of EPL technology comes as other semiconductor equipment suppliers increase their R&D in extreme-ultraviolet technology (EUV). In fact, Applied Materials Inc. and ASM Lithography recently decided to dissolved their joint venture in commercializing electron-beam projection technology to focus more effort on EUV (see Jan. 5 story).

But Nikon believes electron projection lithography will win out in tools for critical layers at the 0.07-micron technology node.

"In 1999, we reported results from the proof-of-concept electron optical system developed by IBM that confirmed the capability to fabricate integrated circuits in volume production," said Shoichiro Yoshida, president of Nikon. "We believe that EPL will provide our customers the capability to extend to sub-35 nm resolution."

In papers to be presented at next week's SPIE Microlithography Conference in Santa Clara, Calif., engineers from Nikon plan to describe results from a prototype electron optical system. The company said these results confirm the deflection performance of the three-dimensional curvilinear variable axis lens, which are necessary for volume production.

The prototype electron optical subsystem, developed at IBM Corp.'s Semiconductor Research and Development Center, was recently installed in Nikon's Kumagaya facility. The system will be integrated into Nikon's first commercial e-beam stepper.

Electron optical system characterization data will be available the second quarter of 2001, said the company. And total system integration performance data will be reported in mid-2002. Nikon said it plans to begin shipping production EPL tools by the fourth quarter 2004.