MUNICH -- Infineon Technologies AG today (March 6) launched a new low-latency 128-mgeabit synchronous DRAM, which can be read in one less clock cycle than previously available PC133 SDRAM chips.
"We are able to assure supplies of memory at the fastest CAS-latency of 2 by taking advantage of our advanced 0.17-micron manufacturing technology," said Heinrich Florian, director of product marketing in Infineon's Memory Product Group. "We are ramping PC133 CL-2 production volume as we see a strong general trend in the industry to use PC133 DRAMs for almost all volume SDRAM applications, and the CL-2 version offers clear performance benefits to our customers."
The new memory operates at 133-MHz speeds and delivers data in two vs. three column-address-strobe (CAS) read cycles. (CAS-latency is the access time from the "read" command of the memory controller to the time the SDRAM delivers the requested data.) The lower latency times are expected to be a popular feature for servers, workstations, and high-performance desktop PCs.
The new low-latency 128-Mbit SDRAMs are available in three memory organizations: 32-Mbit-by-4; 16-Mbit-by-8; and 8-Mbit-by-16. Infineon also said it was introducing PC133 CL-2 unbuffered dual-inline memory modules (DIMMs) with 64-, 128- and 256-Mbyte densities.
Samples of new 128-Mbit SDRAM (PC133 CL-2) are now available with pricing set at $7.20 each for quantities of 1,000. Infineon said it was sampling the PC133 CL-2 memory modules with the 64-Mbyte DIMM costing $60 and the 128-Mbyte module selling for $120 in 1,000-piece quantities.
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