NAPERVILLE, Ill. -- Tezzaron Semiconductor Corp.--formerly known as Tachyon Semiconductor Corp.--here took a step to enable three-dimensional (3-D) silicon by year's end. The chip-packaging specialist claims to have developed a multi-wafer stack technology with "vertical through-silicon connections" for 3-D devices.
The wafer stack was developed by Tachyon Semiconductor (Singapore) Pte. Ltd., the Singaporean subsidiary of Tezzaron, based in Naperville.
Each of the wafer stacks contains 3 or 4 eight-inch wafers. Before being bonded into a stack, each wafer was patterned with tiny connectors embedded vertically in the silicon. The connection process is based on the company's proprietary Super-Vias technology.
Cross-section micrographs reveal the wafer alignment is precise to within 1/3 micron, providing overlap for connectivity. The Super-Vias are 4 microns in diameter, embedded at densities as high as 14,000 per square millimeter.
Some of the Super-Vias were positioned to pierce only one wafer. Meanwhile, others were designed to interconnect with Super-Vias on other wafers. Wafer alignment during the bonding process allowed these Super-Vias to interconnect according to design, creating conductive paths that pierced two or more wafers.
In addition to providing electrical connectivity, Super-Vias address the worrisome issue of thermal buildup. Copper Super-Vias act as efficient radiators, dissipating heat that would otherwise be trapped between the silicon layers. The company minimizes thermal buildup by ultra-thinning each bonded wafer to a depth of only 13 microns.
Tachyon believes that future stacks can be built with smaller Super-Vias at higher densities.
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