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TriQuint wins DARPA contract to develop gallium nitride power amp
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EE Times


MANHASSET, N.Y. — TriQuint Semiconductor Inc. announced Friday it has been awarded a multi-year contract from the Defense Advanced Research Projects Agency (DARPA) to develop high power wide band amplifiers in gallium nitride.

The contract is in two phases. The first phase, lasting three years and valued at $15.8 million, covers the development of gallium nitride material and devices to improve performance and reliability. The second, optional phase covers years four and five and is valued at $15.9 million. This phase will develop gallium nitride high power, wide band amplifiers and package technology for insertion into Department of Defense (DoD) systems.

TriQuint (Hillsboro, Ore.) is teaming with BAE Systems, Emcore Corporation, II-VI Incorporated, Lockheed Martin and Nitronex on the program. University partners Dr. Michael Shur of Rensselaer Polytechnic Institute and Dr. Jesus del Alamo of the Massachusetts Institute of Technology are also participating.

Gallium nitride High Electron Mobility Transistor (HEMT) devices provide the higher power density and efficiency required for high power phased array radar, electronic warfare, and missile seeker and communications systems.

TriQuint has worked with gallium nitride since 1999 under the sponsorship of Lockheed Martin, as well as its own funding. Other team members have also been active in gallium nitride technology development and have demonstrated promising results in terms of performance and reliability.






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