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Samsung develops gigabit mobile DRAM
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EE Times Europe


SEOUL, South Korea — Samsung Electronics Co. Ltd. said it has developed the industry's first 1-Gbit DRAM for mobile products, using 80-nm process technology.

The synchronous DRAM is intended for use in a range of handset applications as well as for digital still cameras, portable media players and portable gaming products, Samsung said.

The monolithic 1-Gbit mobile DRAM uses the same packaging technique as the 512-Mbit double-die stack 1-Gbit package, but it introduces a temperature-sensing feature. This temperature-compensated self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.

The 1-Gbit DRAM is 20 percent thinner than a multi-stack package of 512-Mbit die.

Samsung said it plans to mass produce the new device beginning in the second quarter of 2007.



Related Links:

  • Qimonda launches DDR366 Mobile RAM
  • Samsung unveils fusion memory for mobile apps
  • Samsung Semi president faces jail in DRAM probe



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