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7|31|2015 PORTLAND, Ore.--Today as much as 44 percent of the solar spectrum--the infrared (IR)--goes right through semiconductor solar cells based on silicon (Si), cadmium ...

7|30|2015 NEW YORK — NXP Semiconductors' financial results for the second quarter of 2015 (announced July 30), highlighted $1.506 billion in revenue, a 12% ...

7|30|2015 NEW YORK — A group of national and international researchers have demonstrated an on-chip visible light source using graphene as a filament. The team ...

7|29|2015 No stranger to innovative products, Samsung launches the SE370 monitor, which can wirelessly charge your smartphone. In a world-first break through, the SE370 ...

7|29|2015 NEW YORK — While the domestic solar energy industry grew by 34% last year, fundamental technical breakthroughs are still needed to achieve the national ...

7|28|2015 MUNICH — In some geographies including Germany, smart meters are mandatory for new buildings — being an ingredient of smart grids, they allow energy ...

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michigan0
Re: Globalfoundries Laounches Own FDSOI Processes: Sang Kim First, according to my "device physics" your baseline device that has a gate length(channel length) of 24nm requires channel thickness of 6nm, not 7nm in order to avoid punch-through. The channel length is determined by source to drain length, not by the spacer to spacer length unless the spacer to spacer is is the same as the source to drain length, but it is not likely.  At what tech nodes they(?) use "shallow but relatively heavily doped S/D extension"? The next node to 28nm bulk is 22nm bulk. The 22nm bulk was not manufactured because unable to suppress leakage currents at the bulk 22nm node due to short channel effects. Therefore, the 28nm bulk wasn't scalable to 22nm, thus ended at the 28nm node. That is why Intel developed and manufactured FinFET at 22nm to suppress leakage currents. The FinFET on-currents come from the very long periphery region. Therefore, LDD is unnecessary at any node. The beauty of FinFET is that as long as fin width at the bottom of the fin is equal to or smaller than the gate length, Lg or channel length, the leakage currents are suppressed. That is why Intel 14nm FinFETs are volume manufactured over two years and TSMC 16nm FinFET will be manufactured in 2016 or next year but no bulk at any node yet except at 28nm node.It...
michigan0 on Globalfoundries Launches Own FDSOI Processes
michigan0
Re: Globalfoundries Laounches Own FDSOI Processes: Sang Kim I try, AKHO. Even if you do all what you have described,  yes, you still require un-dopped 7nm thin SOI for 28nm FDSOI. This is the biggest reason why the bulk 28nm that is in mass production by major semiconductor companies for several years but not 28nm FDSOI yet as I described previously. Samsung as you suggested? Please read below.The other critical issue with FDSOI is the hot carrier reliability. The hot carrier reliability is the biggest issue against FDSOI that doesn't have LDD(lightly dopped drain) that 28nm bulk has. When +1 volt is applied to the gate and the drain, a large number of hot carriers(electron and holes) are generated near the drain. Virtually all electrons drift to the positively biased drain. However, the vast majority of holes drift toward the source through the un-dopped SOI channel, triggering DIBL(Drain Induced Barrier Lowering) similar to forward biasing the source by the positive holes(+). Some holes are trapped also at...
michigan0 on Globalfoundries Launches Own FDSOI Processes
Opinion
Last year, I came across some instrumentation challenege questions that had been published in Test & Measurement World a few years prior. The twelve questions were enough ...
Nathaniel Mills of GreeningTheBeast.com and Evan Mills of Lawrence Berkeley National Laboratory just published a study in the journal “Energy Efficiency” a ...
In Why Don't EEs Live in Cities?, I concluded that virtually all electrical engineering today takes place outside of core cities. But, it wasn't always that way. Recently, ...
The odds are that you either have a shoot-though issue or the reverse-recovery losses of the synchronous rectifier's body diode are excessive. Balancing shoot-through and ...
Autonomous, self-driving cars are getting a lot of attention and even hype these days, typified by the Google car, which has been undergoing extensive road trials. ...
Monocrystalline technology gains market share
Designing a premium smartphone has been a delicate balance between performance and battery life for generations. However, continued increases in performance cause growing ...
Eeek Alors! I can't believe it. ESC Silicon Valley 2015 is almost upon us. This coming Sunday I will be jetting out to Santa Clara for three days of fun and frivolity and ...
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In conjunction with unveiling of EE Times’ Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. One of Silicon Valley's great contributions to the world has been the demonstration of how the application of entrepreneurship and venture capital to electronics and semiconductor hardware can create wealth with developments in semiconductors, displays, design automation, MEMS and across the breadth of hardware developments. But in recent years concerns have been raised that traditional venture capital has turned its back on hardware-related startups in favor of software and Internet applications and services. Panelists from incubators join Peter Clarke in debate.
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