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HankWalker
Member Since: June 21, 2006
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Posts: 97

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97 items
Comment: Why ARA Failed - HankWalker - 9/6/2016
Comment: Recording? - HankWalker - 7/29/2016
Comment: Re: human nature - HankWalker - 7/7/2016
Comment: End of nodes - HankWalker - 5/5/2016
Comment: Always On Video - HankWalker - 4/14/2016
Comment: Another Problem - HankWalker - 9/3/2015
Comment: Real Estate Costs - HankWalker - 7/24/2015
Comment: EDA Aging? - HankWalker - 6/24/2015
Comment: Re: Viva POTS! - HankWalker - 6/2/2015
Comment: Biased Sample - HankWalker - 4/22/2015
Comment: Fax Machines - HankWalker - 1/21/2015
Comment: Phase Change Memory - HankWalker - 12/17/2014
Comment: Re: Second biggest? - HankWalker - 10/28/2014
Comment: More Details Please - HankWalker - 10/13/2014
Comment: Lessons Learned - HankWalker - 10/8/2014
Comment: Long Before 1990s - HankWalker - 8/6/2014
Comment: Dirt - HankWalker - 7/18/2014
Comment: Re: Changes - HankWalker - 7/8/2014
Comment: Cost vs. Benefit - HankWalker - 7/4/2014
Comment: The Target User - HankWalker - 6/19/2014
Comment: The Neighbors - HankWalker - 6/19/2014
Comment: We Need Data - HankWalker - 6/3/2014
Comment: As The Wizard Said - HankWalker - 5/12/2014
Comment: Premature RIP - HankWalker - 3/20/2014
Comment: 193i + E-beam? - HankWalker - 2/26/2014
Comment: Value of a PE - HankWalker - 2/4/2014
Comment: Re: Changing time - HankWalker - 12/16/2013
Comment: Peak Mileage - HankWalker - 12/10/2013
Comment: Deja Vu - HankWalker - 11/19/2013
Comment: Now Honda - HankWalker - 11/4/2013
Comment: Remote Backup - HankWalker - 8/19/2013
Comment: Technology Evolves - HankWalker - 8/14/2013
Comment: re: ARM customer ranking - 1/13/2012
Comment: re: Apple should build a fab - 8/30/2010


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What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

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9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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