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R_Colin_Johnson
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posted in March 2003

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Photons enlisted in quantum computer search
News & Analysis  
3/24/2003   Post a comment
In the search for a physical system that could encode quantum states and thus form the basis for a practical quantum computer, researchers at the University of Michigan and the University of Rochester are turning to photonics.
Growth envisioned for semiconducting crystals
News & Analysis  
3/17/2003   Post a comment
Rudolf "Ruud" Tromp is undertaking groundbreaking work in the study of the growth of organic-semiconducting crystals, such as pentacene, which is being applied in flat-panel display technology.
Soft 'chip' compiles Java into no-OS embedded C
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3/12/2003   Post a comment
Advanced Cybernetics Group Inc. claims to have developed a "write anywhere, run anywhere" technology, called Eclipse, that compiles Java programs into an embedded-C program that has no operating system. Next, ACG intends to compile the C program as software not only for embedded microcontrollers but also for hardware field-programmable gate arrays. Eventually, the company wants to program every chip in a system — not just the CPU — with Java.


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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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