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9|26|2016 SAN JOSE, Calif. – Calling for 100x faster processors, China Web giant Baidu released DeepBench, an open source benchmark for how fast processors train ...

9|26|2016 LONDON—Malcolm Penn, the founder and CEO of Future Horizons Ltd. and usually one of the most bullish of chip market forecasters, thinks 2017 could be a ...

9|26|2016 SAN JOSE, Calif. — The MIPS core will be used in a new cellular baseband processor shipping next year and a supercomputer in the works in Japan. The two ...

9|26|2016 PARIS — Digital mapmaker HERE — owned by three leading German automakers BMW, Audi and Daimler — is planning the 2017 launch of new ...

9|22|2016 SAN JOSE, Calif. – Taiwan’s largest semiconductor kitchen released its latest menu, a 3D matrix that spans process, packaging and ...

9|22|2016 PARIS — Whatever you call them — smart microphones, virtual digital assistant, personal home robots, The Control Voice or R2D2 — Amazon ...

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An industry network should have device and data security at ...
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michigan0
Re: GaAs instead of Silicon Germanium: Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
michigan0 on GF Debuts 7nm, Embedded MRAM
yoyoma0
yoyoma0 on EE Times Silicon 60: 2016's Emerging Companies to Watch
realjjj
realjjj on TSMC Expands its 3D Menu
Opinion
The semiconductor industry has undergone a number of large acquisitions this year that indicates a forward direction for the industry. Each of the past several months saw ...
ON Semiconductor announced Monday (Sept 19) the completion of its proposal to acquire Fairchild Semiconductor. The purchase, for $2.4 billion in cash, gives ON ...
The companies agreed that any system would be compromised unless a system-level root of trust between all devices and services providers was established. This led to the ...
I first asked that question in August 2013, shortly after chatter around Apple’s acquisition of Passif surfaced. I mainly thought about the — at that time ...
Onchip, a research group focused on integrated systems at the Universidad Industrial de Santander, is working towards the first system-on-chip designed in Colombia. Aiming ...
Christoph Hagleitner presented IBM’s view of the major applications where FPGAs can provide differentiation such as cognitive computing, high performance computing ...
September 7, 2016 is going to mark a significant milestone in the mobile imaging domain. One of the most anticipated revolutions in the upcoming iPhone7 lies in the camera ...
So, Alphabet Inc.’s Google has pulled the plug on Project Ara. An Ara phone would not be coming to market. The goal of the project was to enable anyone to design a ...

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