SUNNYVALE, CALIF. — Fairchild Semiconductor says that its SyncFET devices are the industry's first integrated MOSFETs and Schottky diodes in a single die for dc/dc converter designs.

The device's vertical DMOS Power Trench feature and a titanium Schottky barrier diode in a monolithic die provide a dramatic performance improvement and cost savings over discrete or copackaged solutions, according to the company. Favoring SyncFET over such copackaged designs as FETKY, Fairchild says with the integrated single-die approach, the entire package area is used for the MOSFET, improving performance by nearly 50 percent.

The SyncFET design allows the Schottky area to be scaled to the size required to prevent the MOSFET body-diode from turning on. Integration reduces EMI/RFI, the company points out, since high-frequency currents do not have to flow through bond wires and PCB traces, as in designs using an external Schottky and MOSFET.

Two SyncFET types are available, with others to be released soon in a variety of packages and power-handling capabilities. The FDS6982S combines a 12-milliohm low-side SyncFET and a 21-milliohm low-gate charge high-side MOSFET in a single SO-8 package, providing a single-package power solution for dc/dc converters up to 7 amps. The FDS6680S is an 8.5-milliohm PowerTrench SyncFET in an SO-8 package.

Suggested pricing is $1.05 each for the FDS6982S and 80 cents each for the FDS6680S, both in quantities of 10,000.

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EETInfo No. 603