Breaking News
News & Technology

9|27|2016 GRENOBLE, France — With the inexorable rise of apps and software driven by Google, Facebook and Apple, Silicon Valley has long since ceased to be about the ...

9|26|2016 SAN JOSE, Calif. – Calling for 100x faster processors, China Web giant Baidu released DeepBench, an open source benchmark for how fast processors train ...

9|26|2016 SAN JOSE, Calif. — The MIPS core will be used in a new cellular baseband processor shipping next year and a supercomputer in the works in Japan. The two ...

9|26|2016 PARIS — Digital mapmaker HERE — owned by three leading German automakers BMW, Audi and Daimler — is planning the 2017 launch of new ...

9|22|2016 SAN JOSE, Calif. – Taiwan’s largest semiconductor kitchen released its latest menu, a 3D matrix that spans process, packaging and ...

9|22|2016 PARIS — Whatever you call them — smart microphones, virtual digital assistant, personal home robots, The Control Voice or R2D2 — Amazon ...

EETube
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
Message Boards
umam12
umam12 on Google Glass Enterprise Edition: What We Know So Far
michigan0
Re: GaAs instead of Silicon Germanium: Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
michigan0 on GF Debuts 7nm, Embedded MRAM
yoyoma0
yoyoma0 on EE Times Silicon 60: 2016's Emerging Companies to Watch
realjjj
realjjj on TSMC Expands its 3D Menu
Opinion
After Apple announced another iPhone to a flat reaction from Wall Street, it appears the smartphone revolution is fading into the past. The maturing sector has seen ...
In last week's quiz, I introduced you to some concepts for how and when to use decoupling capacitors for power integrity. This week, we continue our quiz. I will be ...
Security is a broad concept even within a specific arena such as embedded systems. Basic security principles are applicable whether the asset to be protected is ...
I'm sure you've seen those Star Trek episodes where the Klingon or Romulan cloaking device makes a ship appear to disappear. While we haven't yet figured out to make ...
“Oh honey, girls don’t do math.”
Consumers and developers alike will want to know which manufacturers produce the most up-to-date, reliable, and best-performing Android devices. So, we recently compiled a ...
On August 15, IEEE members received ballots to vote on proposed amendments to the IEEE constitution. While this vote may not conjure up as much emotion as the U.S. ...
Today companies that model the properties and behavior of RF signals in natural, urban and industrial settings use databases to organize environmental RF data. Their data ...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Radio
LATEST ARCHIVED BROADCAST

What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.

Brought to you by:

Most Recent Comments
umam12
 
chipmonk0
 
Violoncelles
 
Violoncelles
 
HW&SW
 
rick merritt
 
michigan0
 
yoyoma0
 
SSDWEM
Like Us on Facebook
Special Video Section
Once the base layer of a design has been taped out, making ...
In this short video we show an LED light demo to ...
The LTC2380-24 is a versatile 24-bit SAR ADC that combines ...
In this short video we show an LED light demo to ...
02:46
Wireless Power enables applications where it is difficult ...
07:41
LEDs are being used in current luxury model automotive ...
With design sizes expected to increase by 5X through 2020, ...
01:48
Linear Technology’s LT8330 and LT8331, two Low Quiescent ...
The quality and reliability of Mill-Max's two-piece ...
LED lighting is an important feature in today’s and future ...
05:27
The LT8602 has two high voltage buck regulators with an ...
05:18
Silego Technology’s highly versatile Mixed-signal GreenPAK ...
The quality and reliability of Mill-Max's two-piece ...
01:34
Why the multicopter? It has every thing in it. 58 of ...
Security is important in all parts of the IoT chain, ...
Infineon explains their philosophy and why the multicopter ...
The LTC4282 Hot SwapTM controller allows a board to be ...
This video highlights the Zynq® UltraScale+™ MPSoC, and sho...
Homeowners may soon be able to store the energy generated ...
The LTC®6363 is a low power, low noise, fully differential ...