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Samsung Shows EUV Design at ISSCC

Sensor finds its way in a boot
11/13/2017 00:01 AM EST
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resistion
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Re: SRAM macro
resistion   11/14/2017 4:42:57 PM
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I guess we should look for what layers they applied it on, what feature arrangements and pitches, are there close contact pairs in the middle, etc.

rick merritt
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Re: SRAM macro
rick merritt   11/14/2017 1:44:44 PM
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What should we look for in the paper regarding any insights on Samsung's application of EUV?

rick merritt
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Re: SRAM macro
rick merritt   11/14/2017 1:44:42 PM
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What should we look for in the paper regarding any insights on Samsung's application of EUV?

rick merritt
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Re: 3D NAND
rick merritt   11/13/2017 10:31:13 AM
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Yes, they are clearly very different desgns in multiple ways. Perhaps the papers will give some insights into the technques they used.

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3D NAND
resistion   11/13/2017 1:35:01 AM
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Samsung either has a denser NAND pitch or larger NAND die, compared to Toshiba/WD. Or perhaps the array's area efficiency improved significantly.

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SRAM macro
resistion   11/13/2017 12:20:03 AM
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An SRAM macro is basically a demo of a memory cell, rather than any dense, random logic.

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