Santa Clara, CA--January 29, 1997--Applied Materials Inc. (Santa Clara, CA) introduces single-wafer technology for depositing high-temperature (HT) silicon nitride films in the pre-metal layers of semiconductor devices. The HT Silicon Nitride Centura enables next-generation applications such as 64 Mbit and 256 Mbit DRAMs, flash memories, and dual-gate CMOS circuits by providing uniform, precisely-controlled thin nitride films at a low thermal budget.
The HT Silicon Nitride Centura has undergone extensive testing, with units already shipped to customers in the U.S., Japan, and Korea. The Centura platform accepts up to three nitride chambers for high-productivity manufacturing. The HT Silicon Nitride chamber can also be clustered with other Applied Materials HT chambers for integrated processing applications such as oxide-nitride-oxide stacks, poly-nitride, and nitride-RTP.
The HT Silicon Nitride Centura enhances DRAM cell capacitor reliability and reduces leakage by providing in situ chamber cleaning and a hydrogen bake process for native oxide removal. The wafers being processed are never exposed to oxygen or moisture, and are kept at a constant pressure. Within-wafer thickness uniformity is excellent on 200 mm wafers, varying less than 1 percent, 1 sigma at a 50 Angstrom thickness.
The HT Silicon Nitride Centura uses the same radiant heating technology as the company's Poly Centura, Epi Centura, and Polycide Centura systems. These cost-effective systems provide exceptional productivity and device yield.
Santa Clara, CA
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