MUNICH, Germany Shanghai-based foundry service provider Grace Semiconductor has developed a 130nm manufacturing process for embedded flash products. For this achievement, the company combined two proven processes.
According to Grace, the new process builds on elements of its self-aligned spilt-gate flash technology and its standard 130nm logic technology. Both processes are established and proven, the company points out.
With the process introduced now the company promises to enable chip designers to generate competitive macros. Features are a competitive cell size (albeit Grace does not elaborate) as well as efficient programming and over-erase free behavior. With respect to data retention, Grace guarantees a retention time of 100 years. In addition, the flash cells are good for 100.000 write cycles, the company says.
Since the flash process is compatible with existing logic generic and low power processes, customers have access to an extensive inventory of libraries and IP.
Besides the 130nm embedded flash process, Grace also has announced a cost-efficient dual-gate process for SIM card applications. The cost efficiency is achieved by removing the 3.3V devices from the process. This reduces the number of lithography masks required for production, the company said.
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