Meurice said that finding a suitable light source
for EUV has been on the critical path for some time but that one
supplier has "repeatedly demonstrated" 50 watts and that the concept
of a 105 watt source had been confirmed in laboratory experiments.
Meurice said these would provide the platform for 70 wafer per hour
throughput in 2014 upgradeable to 125 wafers per hour throughput two
In situ experiments on the NXE:3300 will be
necessary to confirm this and the company plans to confirm
the road map by late summer, Meurice told the analysts.
"In view of the progress made we
have received a customer commitment to purchase four additional
NXE:3300 systems, that makes it a total of 15, preparing in fact for the
first semiconductor device production on EUV in 2014," Meurice said.
executives went on to confirm that the four additional NXE:3300 machines
have been ordered by a DRAM manufacturer and that meanwhile ASML is in
negotiation with a second DRAM manufacturer for a volume order also
deliverable in 2014, and that a third production volume order is being
negotiated with a logic company for delivery in 2015 and targeting the
14/12/11-nm node. "Anywhere near 14-nm or 12-nm means the same thing,"
When asked what the initial throughput of the
NXE:3300 would be Meurice explained that there is no set specification
on the first "process development" 11 machines and that the purchasers had been prepared to accept them at whatever throughput capability.
"The minimum performance from
what we can see at this moment would be I would say a 30ish wafer per
hour if we get unlucky on the first machine with more work to stabilize
the control mechanism potentially taking three months, six months or so
to get to a point where 30 wafer per hour will transform itself in 70."
But there is a specification on the following four
machines and orders thereafter, which is 70 wafers per hour upgradeable to 125 wafers per hour within two years.