LONDON – Engineering services company UBM TechInsights has found examples of the Samsung 27-nm NAND flash memory and taken photographs (see below).
Examination of the device, with a die-marking of K9GBG08U0A, shows that the chip is made on a manufacturing process technology of 27-nm, as Samsung said in their April press release announcing the 32-Gbit device.
This is the second NAND flash device in production at the 20-nm class, joining a 64-Gbit 25-nm multi-layer cell NAND Flash from IM Flash Technologies, according to UBM TechInsights.
However, Hynix claimed it was in mass production with a 64-Gbit NAND flash memory made on a 26-nm manufacturing process in August 2010.
"Samsung has been able to successfully scale down to 27-nm from 35-nm by introducing innovative techniques that have overcome hurdles obstructing other major memory manufacturers," said Jason Abt, senior product manager for technical intelligence, at UBM TechInsights (Ottawa, Ontario).
When used in SD Card applications; write performance improves by 30 percent compared to the 35-nm version of the same memory (Samsung K9GBG08U0M). Reliability levels at all memory sizes are comparable to 35-nm versions, UBM TechInsights said. Sampling of the memory began in 3Q10 with volume production in 1Q11.
UBM TechInsights is owned by UBM plc, the same company that publishes EE Times.
Related links and articles:
UBM TechInsights on Samsung flash
Hynix ramps 26-nm NAND flash
Samsung rolls 20-nm class NAND flash
Hynix, Samsung push NAND flash below 30-nm
IMFT 25-nm MLC NAND: technology scaling barriers broken
X-ray cross-section of Samsung 27-nm NAND flash memory.
Die-shot of Samsung 27-nm NAND flash memory.
Part number etched into surface of Samsung 27-nm NAND flash die.
Cross-section of Samsung 27-nm NAND flash memory (no scale marker provided by UBM TechInsights).