REGISTER | LOGIN
Breaking News
Spin Transfer, TEL Partner on MRAM Process Development
10/17/2017

Tom Sparkman
Tom Sparkman

Return to Article

View Comments: Newest First | Oldest First | Threaded View
resistion
User Rank
Author
Re: Just like Everspin
resistion   11/3/2017 9:08:33 PM
NO RATINGS
It doesn't really matter, the outcome is still the same: when you try to reduce the spin-transfer write current, the read current must be reduced even further.

FChen
User Rank
Author
Just like Everspin
FChen   10/17/2017 2:11:12 AM
NO RATINGS
The STT company seems to want be like Everspin or replace Everspin. Put an in-plane polarizer into a perpendicular STT-RAM stack for less stochastic torque. Foundries may want to double-check if they got the right ST-MRAM.

resistion
User Rank
Author
DRAM replacement fixation
resistion   10/17/2017 1:29:37 AM
NO RATINGS
They must have forgotten the attractions of a DRAM cell - 6F2, infinite endurance, 10 ns. For ST-MRAM, the latter two are part of a tradeoff.

Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed