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Spin Transfer, TEL Partner on MRAM Process Development

10/17/2017 00:01 AM EDT
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resistion
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DRAM replacement fixation
resistion   10/17/2017 1:29:37 AM
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They must have forgotten the attractions of a DRAM cell - 6F2, infinite endurance, 10 ns. For ST-MRAM, the latter two are part of a tradeoff.

FChen
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Just like Everspin
FChen   10/17/2017 2:11:12 AM
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The STT company seems to want be like Everspin or replace Everspin. Put an in-plane polarizer into a perpendicular STT-RAM stack for less stochastic torque. Foundries may want to double-check if they got the right ST-MRAM.

resistion
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Re: Just like Everspin
resistion   11/3/2017 9:08:33 PM
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It doesn't really matter, the outcome is still the same: when you try to reduce the spin-transfer write current, the read current must be reduced even further.

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