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Samsung in Production of Second-gen 10nm DRAM

12/20/2017 00:01 AM EST
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resistion
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Re: cell dimensions in nm?
resistion   12/20/2017 6:29:24 PM
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Until the Techinsights report comes out, I estimate using 88% of 18 nm dimensions (i.e., 88% of: 36 nm active pitch, 48 nm wordline pitch, 54 nm bitline pitch).

dnadler017
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cell dimensions in nm?
dnadler017   12/20/2017 2:33:53 PM
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What are the dimensions of a bit cell in nm? Thanks!

resistion
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Re: questions...
resistion   12/20/2017 1:43:44 PM
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Air spacer should decrease capacitance, that's a good catch. Thanks for pointing that out. "30% more productivity" should mean capacity or density, effectively.

dnadler017
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questions...
dnadler017   12/20/2017 10:29:33 AM
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*increases* parastic capacitance?How do they define "productivity"?Thanks!

resistion
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further planar scaling
resistion   12/20/2017 6:39:49 AM
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Impressive they got down to 15-16 nm, this is where planar NAND stopped. Will DRAM be able to go further?

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